An ideal n-channel MOSFET has the following parameters: VT 0.45 V, n 425 cm2 /V-s, tox 11 nm 110 Å, W 20 m, and L 1.2 m. (a) Plot ID versus VDS for 0 VDS 3 V and for VGS 0, 0.6, 1.2, 1.8, and 2.4 V. Indicate on each curve the VDS (sat) point. (b) Plot ID (sat) versus VGS for 0 VGS 2.4 V. (c) Plot ID versus VGS for 0 VGS 2.4 V and for VDS 0.1 V.