Now you are given the additional information that the subthreshold swing of this transistor technology at room temperature is s=78 mv/dec. at a bias of vgs=3 v and vds=3 v, estimate the backgate transconductance gm of a wg=10 µm device.

Acharged particle moves in a circular path in a uniform magnetic field.which of the following would increase the period of the particle's motion? check all that apply.increasing its chargeincreasing its massincreasing the field strengthincreasing its speed