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Physics, 22.06.2019 16:50
Consider the growth of a 20-nm-diameter silicon nanowire onto a silicon wafer. the temperature of the wafer surface is maintained at 2400 k. assume the thermal conductivity of the silicon nanowire is 20 wm-1k-1 and all its surfaces including the tip are subjected to convection heat transfer with the coefficient h = 1×105 wm-2k-1 and t∞ = 8000 k. when the nanowire grows to l = 300 nm, what is the temperature of the nanowire tip (t (x =
Answers: 1
Physics, 22.06.2019 20:50
Asquare 1m x 1m plate is shown below. all four of its edges are kept at 0 co. at t=0the temperature distribution is given by: y xtsins n75)=.a) using separation of variables determine the temperature distribution t(x,y,t)along the plate at any time t.b) discretize the heat conduction equation +=22222 txtusing a second-order centered difference scheme for the two second derivatives and a first-order forward euler scheme for the first derivative. using von neumann stability analysis, determine the stability criterion for the proposed discretization scheme in terms of , hand t. solve for the maximum allowable time step tmax
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Physics, 22.06.2019 21:30
Which sections of the heating curve illustrate this process?
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Physics, 22.06.2019 23:40
To place a communications satellite into a geosynchronous orbit at an altitude of 22,240 mi above the surface of the earth, the satellite first is released from a space shuttle , which is in a circular orbit at an altitude of 185 mi, and then is propelled by an upper-stage booster to its final altitude. as the satellite passes through a, the booster's motor is fired to insert the satellite into an elliptic transfer orbit. the booster is again fired at b to insert the satellite into a geosynchronous orbit. knowing that the second firing increases the speed of the satellite by 4810ft/s, determine (a.) the speed of the satellite as it approaches b on the elliptic transfer orbit, (b.) the increase in speed resulting from the first firing at a.
Answers: 2
A positive charge of 6.0×10^-4 C is in an electronic field that exerts a force of the of 4.5×10^-4 N...
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