As a part of producing MOSFET transistors, a p-type silicon (Si) wafer containing boron (B) dopants at a concentration of 1x1019 atoms/cm3 is being processed to create a PN junction by doping the wafer with phosphorous (P) atoms using a P-producing gas. Assume that the wafer does not contain P prior to the diffusion process. The solubility of P in Si at 1000°C is 1x1020 atoms/cm3. It is determined that the PN junction depth of 1 um was produced after 60 minutes at 1000°C. The activation energy for estimating the diffusion coefficient of P in Si is 2.5x105 J/mole. Based on this result, estimate the pre-exponential constant for the diffusion coefficient of P in Si at 1000°C in cm2/s.
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Physics, 21.06.2019 20:40
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(a) calculate the number of electrons in a small, electrically neutral silver pin that has a mass of 10.0 g. silver has 47 electrons per atom, and its molar mass is 107.87 g/mol. (b) imagine adding electrons to the pin until the negative charge has the very large value 1.00 mc. how many electrons are added for every 109 electrons already present
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The electric field between square plates of a parallel-plate capacitor has magnitude e. the potential across the plates is maintained with constant voltage by a battery as they are pulled apart to twice their original separation, which is small compared to the dimensions of the plates. the magnitude of the electric field between the plates is now equal to a)e b)e/4 c)e/2 d)4e e)2e
Answers: 1
As a part of producing MOSFET transistors, a p-type silicon (Si) wafer containing boron (B) dopants...
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