A sample of N-type silicon is at the room temperature. When an electric field with a strength of 1000V /cm is applied to the sample, the hole velocity is measured and found to be 2 × 105 cm/sec.
a. Estimate the thermal equilibrium electron and hole densities, indicating which is the minority carrier. [5 pts]
b. Find the position of EF with respect to Ec and Ev. [10 pts]
c. The sample is used to make an integrated circuit resistor. The width and height of the sample are 10µm and 1.5µm, respectively, and the length of the sample is 20µm. Calculate the resistance of the sa]
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A sample of N-type silicon is at the room temperature. When an electric field with a strength of 100...
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