Physics, 21.08.2019 02:30 drakesmith43
An ideal mos capacitor is fabricated by using intrinsic silicon and an nt polysilicon gate. (a) sketch the energy-band diagram through the mos structure under flat-band conditions. (b) sketch the low-frequency c-v characteristics from negative to positive gate voltage.
Answers: 1
Physics, 22.06.2019 09:30
Astone is dropped from a cliff and falls 9.44 meters. what is the speed of the stone when it reaches the ground? a. 13.6 m/sec b. 1.39 m/sec c. 185 m/sec d. 9.80 m/sec
Answers: 3
Physics, 22.06.2019 11:50
Two resistors r1 and r2 may be connected either in series or parallel across an ideal battery with emf ε. we desire the rate of energy dissipation of the parallel combination to be 8.75 times that of the series combination. if r1 = 105 ω, what are the (a) smaller and (b) larger of the two values of r2 that result in that dissipation rate?
Answers: 2
An ideal mos capacitor is fabricated by using intrinsic silicon and an nt polysilicon gate. (a) sket...
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