Given an n-channel mosfet with: z/l-20, p-500 cm2/v-s oxide thickness 10 nm; relative dielectric constant of oxide-5: p+ poly si gate electrode: body doping of 2e17/cm3 qt-+2e11/cm2. cålculate the thresholdôoltage. assume that the fermi level in the gate is coincident with the valence band. be neat-show your results in a tabular form. a) we assume that the drain-source current is zero until threshold. is this true? what is the approximate functional relationship between current and gate voltage prior to threshold-explain using an appropriate y direction band diagram

the box does not move because you need to use a force greater than 300 n. you are only using 50 n. it needs to at least be 301 n for the box to move because then it is an unbalanced force and it will move the way that the greater force is pushing it. if you use only 300 n it will be a balanced force and will not move because the force you are exerting on the   box is the same as its force.

hope this !

im sorry if i went too in depth, i am going to include a link to a video on khan academy that will explain this.   hope that you like the video and that it explains more in detail to you.

that is the link.

when two balls of the different masses are dropped from equal height, they reach the ground at the same time .this is because they experience the same acceleration.

the acceleration is independent of mass.

thus when they are dropped they will always maintain the same velocity and travel the same distance (neglect air resistance of course) at the same time.