You are asked to design a 4h-sic p-mosfet, which will be fabricated on the same chip with the n-mosfet of problem 1. the 4h-sic p-mosfet will be used with the device of problem 1 to build a cmos logic gate (see figure below). therefore, both devices should have the same gate oxide material, oxide thickness, and oxide charge density. since the p-mosfet requires n-type region, such region was implanted to produce doping of 1x10 c (a) calculate v (b) (b) if we need saturation current iss 10 ma at vo 5v, what will be the gate width z, if you choose l= 1 μm.