Define the majority carrier concentration in an n-type si semiconductor in terms of the conduction band edge energy ec and the fermi energy e 2 marks find an expression for ee - ep, i. e, the difference between the conduction band edge energy and the fermi energy in terms of the donor concentration np 4 marks determine the concentration of donor impurity atoms that must be added to silicon so that ec ep 0.2 ev 4 marks

d₁ = displacement of tern from arctic to antarctic = 11000 miles

d₂ = displacement of tern from antarctic to arctic =   - 11000 miles

d = total displacement for the journey

total displacement for the journey is given as

d = d₁ + d₂

d = 11000 + (-11000)

d = 0 miles

t₁ = time of travel from arctic to antarctic = 3 months = 3 x 30 days = 90 days

t₂ = time of travel from antarctic to arctic = 3 months = 3 x 30 days = 90 days

t = total time of travel

total time of travel is given as

t = t₁ + t₂

t = 90 + 90

t = 180 days

average velocity is given as

average velocity = total displacement/ total time

v = d/t

v = 0/180

v = 0 miles/day

a. spokes of a wheel.

as indicated in the question radial contains rad, also found in radius, so the fracture's would span the radius.