Engineering, 23.11.2021 02:40 chris1848
Design a 50 A silicon pn diode capable of blocking voltages of 150 V. The junction area must be minimized and the diode temperature must not increase more than 40 °C during operation.
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Q: Specify the doping concentrations and thicknesses of the n- and p- base regions.
Q: Calculate the series resistance of the diode
Q: Estimate the heat dissipation requirement at the maximum operating current.
Q: Specify the junction shape and minimum junction area.
Q: Describe any special measures to suppress surface leakage currents.
Answers: 3
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Design a 50 A silicon pn diode capable of blocking voltages of 150 V. The junction area must be mini...
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