Engineering, 06.04.2021 01:40 tylerbrewton23
If we have silicon at 300K with 10 microns of p-type doping of 4.7*1016/cc and 10 microns of n-type doping 4.2*1014/cc, what applied bias will completely deplete one side of the diode? Use three significant digits and fixed notation). The diode is square with an edge length of 10 microns. Assume p and n mobilities are 500 & 1500 cm^2/(V*s) respectively. Assume there is no breakdown.
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If we have silicon at 300K with 10 microns of p-type doping of 4.7*1016/cc and 10 microns of n-type...
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