subject
Engineering, 02.11.2020 17:00 journeywalker19

Assume the transistor is biased in the saturation region at VGS 4 V. (a) Calculate the ideal cutoff frequency. (b) Assume that the gate oxide overlaps both the source and drain contacts by 0.75 m. If a load resistance of RL 10 k is connected to the output, calculate the cutoff frequency.

ansver
Answers: 2

Another question on Engineering

question
Engineering, 03.07.2019 14:10
Amass of 1.5 kg of air at 120 kpa and 24°c is contained in a gas-tight, frictionless piston-cylinder device. the air is now compressed to a final pressure of 720 kpa. during the process, heat is transferred from the air such that the temperature inside the cylinder remains constant. calculate the boundary work input during this process.
Answers: 2
question
Engineering, 04.07.2019 16:10
An electrical motor raises a 50kg load at a construct velencity .calculate the power of the motor, if it takes 40sec to raise the load through a height of 24m(take g =9.8n/g)
Answers: 2
question
Engineering, 04.07.2019 18:10
Assuming compressible flow of air and that the measurements are done at flagstaff a pitot static tube that gives the difference of total and static pressure measures 0.35 m of mercury. what is the velocity of air? assume the temperature to be 300k. (submit your excel or matlab calculation sheet)
Answers: 1
question
Engineering, 04.07.2019 18:10
True or false (explain) (110)[111] is a slip system in bcc metals . the {111} family in fcc contains 8 planes. resolved shear stress (rss) in single crystals is just related to the applied stress. critical resolved shear stress (crss) in single crystal metals is direct proportional to the number of defects in the structure
Answers: 2
You know the right answer?
Assume the transistor is biased in the saturation region at VGS 4 V. (a) Calculate the ideal cutoff...
Questions
question
Mathematics, 13.01.2020 05:31
question
Mathematics, 13.01.2020 05:31
question
Mathematics, 13.01.2020 05:31