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Engineering, 15.10.2020 14:01 user20061024

Silicon carbide nanowires of diameter D = 15 nm can be grown onto a solid siliconcarbide surface by carefully depositing droplets of catalyst liquid onto a flat silicon carbide substrate. Siliconcarbide nanowires grow upward from the deposited drops, and if the drops are deposited in a pattern, an array ofnanowire fins can be grown, forming a silicon carbide nano-heat sink. Consider finned and unfinned electronicspackages in which an extremely small, 10 μm × 10 μm electronics device is sandwiched between two d = 100-nm-thick silicon carbide sheets. In both cases, the coolant is a dielectric liquid at 20°C. A heat transfer coefficient of h= 1 × 10^5 W/m^2 · K exists on the top and bottom of the unfinned package and on all surfaces of the exposed siliconcarbide fins, which are each L = 300 nm long. Each nano-heat sink includes a 200 × 200 array of nanofins. Required:
Determine the maximum allowable heat rate that can be generated by the electronic device so that its temperatureis maintained at Tt < 85°C for the unfinned and finned packages.

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