A) Assuming a silicon junction breaks down when its maximum internal electric field Em reaches 300 kV/cm, estimate the breakdown voltage BV of the pn junction with the following characteristics: ND = 1016 cm-3

Emo = 5.03E4 V/cm cross-sectional area: A= (100 micrometers)(100 micrometers)= 10-4 cm2

Xd0 = 3.26E-5 cm = 0.326 micrometers Qj0 = 5.23 pC

xpo = .003 micrometers xn0 = .323 micrometers

b) Repeat if ND is doubled to 2E16 cm-3

Fluids at rest possess no flow energy. a)- true b)- false

Consider a large isothermal enclosure that is maintained at a uniform temperature of 2000 k. calculate the emissive power of the radiation that emerges from a small aperture on the enclosure surface. what is the wavelength ? , below which 10% of the emission is concentrated? what is the wavelength ? 2 above which 10% of the emission is concentrated? determine the wavelength at which maximum spectral emissive power occurs. what is the irradiation incident on a small object placed inside the enclosure?

Which of the following components of a pid controlled accumulates the error over time and responds to system error after the error has been accumulated? a)- proportional b)- derivative c)- integral d)- on/off.