Engineering, 21.04.2020 20:36 ernestsbaby6181

The n-p-n BJT has the following doping levels in the E, B and C: NDe = 1.8 e19 cm^-3, NAb = 1.7 e17 cm^-3, NDc = 4.5 e15 cm^-3. The electron drift velocity in the collector depletion region, vs = 1e7 cm/s. The intrinsic electron concentration in Si is 1e10 cm^-3. The relative dielectric permittivity of Si is 11.7. Find the collector depletion region delay time if the collector - base voltage is Vcb = 9 V. (Units: ps)

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The n-p-n BJT has the following doping levels in the E, B and C: NDe = 1.8 e19 cm^-3, NAb = 1.7 e17...

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