Utilizing the charge neutrality equation and the mass-action law derive an expression for the concentration of electrons and holes present inside a p-type compensated semiconductor material. How can the resulting expression be modified for practical cases where (AA − DD) ≫ 2nn�

If the thermal strain developed in polyimide film during deposition is given as 0.0044. assume room temperature is kept at 17.3 c, and thermal coefficient of expansion for the film and the substrate are 54 x 10^-6c^-1 and 3.3 x 10^-6c^-1respectively. calculate the deposition temperature.

Items are similar to the free issue items, but their access is limited. (clo5) a)-bin stock items free issue b)-bin stock controlled issue c)-critical or insurance spares d)-rebuildable spares e)-consumables

An open feedwater heater operates at steady state with liquid entering at inlet 1 with t? = 40°c and pl = 1 .2 mpa. water vapor att2-200°c and p2 = 1.2 mpa enters at inlet 2. saturated liquid water exits with a pressure of pa 1.2 mpa. neglect heat transfer with the surroundings and all kinetic and potential energy effects, determine the mass flow rate of steam at inlet 2 if the mass flow rate of liquid water at inlet 1 is given as 2 kg/s.