Engineering, 15.04.2020 17:28 addi92

A p-n-p BJT has emitter (NE) , base (NB) , and collector (NC) doping of 10^20 cm-3, 10^18 cm-3, and 10^17 cm-3, respectively, and a base width of 0.5 micron. Calculate the peak electric field at the CB junction, and the CB depletion capacitance per unit area for the normal active mode of operation with a VCB = 50 V. How much is the neutral base width narrowing at this voltage, ignoring the EB depletion region? What impact does this have on the output characteristics of the BJT, and what is this effect called? If the emitter-base forward bias is 0.6 V, calculate the emitter current, assuming negligible recombination in the base, and emitter injection efficiency of 0.9. The electron and hole mobilities are 500 and 200 cm2/V-s, respectively, and the device cross section is 0.1 square micron.

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A p-n-p BJT has emitter (NE) , base (NB) , and collector (NC) doping of 10^20 cm-3, 10^18 cm-3, and...

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