Engineering, 11.03.2020 05:27 sheyunicorn
Consider a N-channel enhancement MOSFET with VGS = 3V, Vt = 1 V, VDS = 10 V, and lambda =0 (channel length modulation parameter). Which of the following best describes the behavior of this transistor?a. The current IDS is greater than 0 since the VGS has induced an inversion layer and the transistor is operating in the triode region. A value of VDS=12 V would not result in a higher IDS current. b. The current IDS is greater than 0 since the VGS has induced an inversion layer and the transistor is operating in the saturation region. A value of VDS=12 V would result in higher IDS current. c. The current IDS is greater than 0 since the VGS has induced an inversion layer and the transistor is operating in the saturation region. A value of VDS=12 V would result in a higher IDS current due to channel-length modulation. d. The current IDS is greater than 0 since the VGS has induced an inversion layer and the transistor is operating in the saturation region. A value of VDS=12 V would not result in a higher IDS current.
Answers: 1
> 
because 
> Vt.By the saturation region the MOSFET is operating. A specific source voltage and gate of NMOS, the voltage get drained during the specific level, the drain voltage is rises beyond where there is no effect of current during saturated region.MOSFET is a transistor which is a device of semiconductor vastly used for the electronic amplifying signals and switching in the devices of electronics. The core of this is integrated circuit.It is fabricated and designed in an individual chips due to tiny sizes.
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Consider a N-channel enhancement MOSFET with VGS = 3V, Vt = 1 V, VDS = 10 V, and lambda =0 (channel...
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