Engineering, 25.02.2020 19:00 toro63

Consider a MOSFET with the oxide thickness of 4.5 nm. The oxide layer dielectric constant is 3.9. The gate length is L= 1.2 um; the gate width is W= 12 um. The electron mobility in the channel is 240 cm^2/Vs. The MOSFET threshold voltage is 0.6 V. The gate bias is VGS = 1.2 V. Velocity saturation effects in the MOSFET can be ignored.
(a) At what drain-sourse voltage the drain current saturates ? (Unit: V)
(b) Find the MOSFET saturation current, Isat. (Unit: uA)

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Consider a MOSFET with the oxide thickness of 4.5 nm. The oxide layer dielectric constant is 3.9. Th...

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