Engineering, 13.02.2020 23:31 andrew2217
For an n-type GaAs/p-type AlsGao As heterojunction at room temperature, AEc-0.21 eV. Find the total depletion width at thermal equilibrium when both sides have impurity concentration of 5 x 1015 cm 3. (Hint: the bandgap of Al, Ga As is given by E ()- 1.424 1.247x eV, and the dielectric constant is 12.4 -3.12x. Assume Nc and N, are the same for A GaAs with 0
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For an n-type GaAs/p-type AlsGao As heterojunction at room temperature, AEc-0.21 eV. Find the total...
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