Consider an nmos transistor with vth = 0.4 v, kn = 140μa/v2 , length, l = 0.25μm, and width, w = 1.25μm.

(a) given that vgs = 1v, determine the range of values of vds for which the device is in the saturation region.
(b) given that vgs = 1v, determine the range of values of vds for which the device is in the triode/linar region.
(c) plot ids vs vgs for operation in the saturation region. ignore channel length modulation i. e. assume that λ = 0. for the following parts, you will try to "size" the transistor to meet your needs i. e. choose its length and/or width.
(d) keeping the transistor length the same i. e. l = 0.25μm, what width, w, should you choose such that ids = 252μa when vgs = 1v and vds = 1.0v. again, assume that λ = 0.
(e) keeping the transistor length the same i. e. l = 0.25μm, what width, w, should you choose such that the on resistance of the transistor (i. e. in the triode region) is ron = 3kω. note: round the width to the nearest 0.05μm.