Engineering, 06.12.2019 02:31 ecenteno2004

Aschottky diode is formed between a metal of work function eϕm = 4.7 ev, and a semiconductor of electron affinity eϕb = 4.0 ev. the semiconductor is n-type with nd = 1016 cm-3, nc = 1019 cm-3 and er = 12. assuming the thermal equilibrium and complete ionization at 300 k, calculate: built-in potential and width of the depletion region. as much detail as possible . i was at the doctor and missed the class where this was cover, i am trying to catch up the remainder of the semester.

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Aschottky diode is formed between a metal of work function eϕm = 4.7 ev, and a semiconductor of elec...

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