Engineering, 25.11.2019 21:31 mem8163

The doping concentrations in a silicon pn junction are nd = 5 times 1015 cm-3 and na = 5 times 1016 cm-3. the minority carrier concentration at either space charge edge is to be no larger than 10 percent of the respective majority carrier concentration. determine the maximum forward-bias voltage that can be applied to the junction and still meet the required specifications. is the n-region or p-region concentration the factor that limits the forward-bias voltage? repeat part (a) if the doping concentrations are nd = 3 times 1016 cm-3 and na = 7 times 1015 cm-3.

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The doping concentrations in a silicon pn junction are nd = 5 times 1015 cm-3 and na = 5 times 1016...

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