One method of introducing dopant impurities into silicon (so as to control the electronic properties) is to depos a in layer on the surface and allow the impurity to diffuse in at a high temperature. suppose we vapor deposit a thin layer of boron that has 2 x 1015 atoms/cm2 on the surface of a pure silicon wafer, and anneal the wafer for three hours at 1200 c. to about what depth will the boron concentration be greater than 1018 atoms/cm3? to what depth greater than 1016 atoms/cm3? about what will be the concentration of boron at the surface of the silicon? the diffusion coefficient for boron in silicon is given by: q = 3.69 ev: do=14 cm2 /sec.

Water in a partially filled large tank is to be supplied to the roof top, which is 8 m above the water level in the tank, through a 2.2-cm-internal-diameter pipe by maintaining a constant air pressure of 300 kpa (gage) in the tank. if the head loss in the piping is 2 m of water, determine the discharge rate of the supply of water to the roof top in liters per second.

Atank with constant volume contains 2.27 kg of a mixture of water phases (liquid-vapor). in the initial state the temperature and the quality are 127 °c and 0.6, respectively. the mixture is heated until the temperature of 160 oc is reached. illustrate the process in a t-v diagram. then, determine (1) the mass of the vapor in kg at the initial state, (2) the final pressure in kpa.

Acommercial grade cubical freezer, 4 m on a side, has a composite wall consisting of an exterior sheet of 5.0-mm thick plain carbon steel (kst= 60.5 w/m k), an intermediate layer of 100-mm thick polyurethane insulation (kins 0.02 w/m k), and an inner sheet of 5.0- mm thick aluminium alloy (kal polyurethane insulation and both metallic sheets are each characterized by a thermal contact resistance of r 2.5 x 104 m2 k/w. (a) what is the steady-state cooling load that must be maintained by the refrigerator under conditions for which the outer and inner surface temperatures are 25°c and -5°c, respectively? (b) for power saving purpose, which wall material should be increased/reduced in. thickness in order to reduce 50% of the cooling load found in part (a)? redesign the thickness of the proposed material. 177 w/m-k). adhesive interfaces between the q=575.93 w