There is a (p )-n semiconductor for solar cell application. The p-n junctions are used to produce electrons and holes by adsorbing photons in the junction. Assume that the doping concentration NAon the p-side of this junction is the same as NDon the n-side. Each side is many diffusion lengths long. Find the expression for the hole current Ipin the p-type material.

i think is conclusions.i think so

answer : third trial had the contaminated sample and the correct value for dhrxn should be 1000 kj/mol

explanation :

let us write down the given equations

equation 1 :

equation 2 :

equation 3 :

let us use hess's law to find out which 2 equations can be added to get the third equation.

let us reverse equation 2 and multiply it by 2. the new equation that we get is,

equation 4 :

let us add equation 1 & 4

the above equation is similar to equation 3 but has different value for dhrxn.

therefore third trial had the contaminated sample and the correct value for dhrxn should be 1000 kj/mol