Phosphorus is implanted into silicon. The implant parameters are a dose of 1015cm-2at an energy of 150keV. a)Find the depth of the peak of the implant profile and its value at that depth. b)If the wafer originally had 1016cm-3of boron uniformly distributed throughout, find the depth(s) at which the concentration of phosphorus is equal to the concentration of boron.

a)  ≈ 4.99 / cm^3

b)   0.515 um

Explanation:

Given data:

energy = 150 Kev

dose of 10^15 cm^-2

A) find the depth of the peak of the implant profile and its value at that depth

expression for implant profile = written below in the attached file

value of the peak depth ≈ 4.99 / cm^3

B ) determine the depth at which the concentration of phosphorus is equal concentration of boron

= 0.515 um

attached below is the detailed solution to the problem

the temperature of the gas, in k, not celsius.

where are the choice options?