Consider a homogeneous gallium arsenide semiconductor at T 300 K with Nd 1016 cm3 and Na 0. (a) Calculate the thermal-equilibrium values of electron and hole concentrations. (b) For an applied E-fi eld of 10 V/cm, calculate the drift current density. (c) Repeat parts (a) and (b) if Nd 0 and Na 1016 cm3 .

a) The electron carrier concentration is

   The hole carrier concentration is

b) The drift current density is given as

c) Repeated part a the electron carrier concentration is

  Repeated part a the holes carrier concentration is

  Repeated part b the electron density is

Explanation:

The explanation is shown on the first , second ,third and fourth image

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